TSV / Trench Depth Measurement System

This system measures non-destructive, high-speed measurement of TSV, which is indispensable for 2.5D and 3D laminated structures, and trench depth of power semiconductors.

Features

• High-speed measurement of about 1 second per point.
• Depth measurement is possible from 1:10 to 1:30 aspect ratio (depending on diameter)
• Measurement from Φ1µm (depending on shape)
• Possible to measure transparent devices like SiC / GaN.

Applications/Option

• Trench depth and warpage can be measured by the same optical system
• Option: TSV diameter measurement
• Option: FOUP
• Applications: Depth of trench in power semiconductor, trench for element isolation, TSV